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MRF6S19120HSR3

Transistors RF MOSFET Power HV6 19W N-CDMA

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SeekIC No. : 00220383 Detail

MRF6S19120HSR3: Transistors RF MOSFET Power HV6 19W N-CDMA

MRF6S19120HSR3 Data Sheet

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Part Number:
MRF6S19120HSR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.93 GHz to 1.99 GHz Gain : 15 dB
Output Power : 19 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-780S-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1.93 GHz to 1.99 GHz
Gain : 15 dB
Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Package / Case : NI-780S-3
Output Power : 19 W


Parameters:

Technical/Catalog InformationMRF6S19120HSR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-780S
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation19.000 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S19120HSR3
MRF6S19120HSR3



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