Transistors RF MOSFET Power HV6 2GHZ 10W
MRF6S20010GNR1: Transistors RF MOSFET Power HV6 2GHZ 10W
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 68 V | Gate-Source Breakdown Voltage : | - 0.5 V, 12 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-270 |
| Packaging : | Reel |
|
Rating |
Symbol |
Value |
Unit |
| Drain−Source Voltage |
VDSS |
−0.5, +68 |
Vdc |
| Gate−Source Voltage |
VGS |
−0.5, +12 |
Vdc |
| Storage Temperature Range |
Tstg |
−65 to +175 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |
| Technical/Catalog Information | MRF6S20010GNR1 |
| Vendor | Freescale Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 28V |
| Current Rating | 130mA |
| Package / Case | TO-270-2 Gull Wing |
| Packaging | Tape & Reel (TR) |
| Drawing Number | 375; 1265A-03; GNR; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6S20010GNR1 MRF6S20010GNR1 |