MRF6S20010GNR1, US $ 7.84-10.88 , Freescale Semiconductor, MRF6S20010GNR1 DataSheet download, circuit diagram from SeekIC.com

See larger image

SeekIC No. : 00219826 Detail

MRF6S20010GNR1: Transistors RF MOSFET Power HV6 2GHZ 10W

MRF6S20010GNR1 Data Sheet

US $ 7.84~10.88 / Piece | Get Latest Price

Part Number:: MRF6S20010GNR1
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

Price Break

Qty
0~271
271~500

Unit Price
$10.88
$7.84

Processing time
15 Days
15 Days

View more price & deliveries

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

MRF607 evaluate
Features: · 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor· 1.75 Watt Minimum Power Ou...
MRF616 evaluate
Features: • High Gain, 11 DB Typical• Gold Metallization• Emitter BallastingSpec...
MRF627 evaluate
Features: • Common Emitter• PG = 13 dB at 0.5 W/470 MHz• Omnigold™ Metaliz...

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Drain-Source Breakdown Voltage :	68 V	Gate-Source Breakdown Voltage :	- 0.5 V, 12 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	TO-270
Packaging :	Reel

Description

Frequency :
Gain :
Output Power :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : - 0.5 V, 12 V
Drain-Source Breakdown Voltage : 68 V
Package / Case : TO-270

Specifications

Rating	Symbol	Value	Unit
Drain−Source Voltage	V_DSS	−0.5, +68	Vdc
Gate−Source Voltage	V_GS	−0.5, +12	Vdc
Storage Temperature Range	T_stg	−65 to +175	°C
Operating Junction Temperature	T_J	200	°C

Parameters:

Technical/Catalog Information	MRF6S20010GNR1
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	28V
Current Rating	130mA
Package / Case	TO-270-2 Gull Wing
Packaging	Tape & Reel (TR)
Drawing Number	375; 1265A-03; GNR; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRF6S20010GNR1 MRF6S20010GNR1

Customers Who Bought This Item Also Bought

MRF604
US $$5.00 - 5.20 / Piece

Supply Ability:10000Week

View details
MRF604 NPN SILICON RF POWER TRANSISTOR
US $$6.58 - 6.60 / Piece

Supply Ability:1000Week

View details
MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
US $$1.23 - 1.25 / Piece

Supply Ability:2000Week

View details
MRF616 NPN SILICON RF POWER TRANSISTOR
US $$7.06 - 7.08 / Piece

Supply Ability:1000Week

View details
MRF619 NPN SILICON RF POWER TRANSISTOR
US $$12.48 - 12.50 / Piece

Supply Ability:1000Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

MRF6S20010GNR1

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Quick Details

Description

Customers Who Bought This Item Also Bought

Filters(263)

Optical Inspection Equipment(251)

Sensors, Transducers(2877)

Test Equipment(3237)

Cables, Wires(3584)

Crystals and Oscillators(858)