MRF6S21050LR3

Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400L

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SeekIC No. : 00219979 Detail

MRF6S21050LR3: Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400L

floor Price/Ceiling Price

US $ 24.47~24.47 / Piece | Get Latest Price
Part Number:
MRF6S21050LR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~188
  • 188~250
  • Unit Price
  • $24.47
  • $24.47
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 16 dB
Output Power : 11.5 W Drain-Source Breakdown Voltage : 68 V
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V Maximum Operating Temperature : + 150 C
Package / Case : NI-400-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 68 V
Gain : 16 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 12 V
Frequency : 2.11 GHz to 2.17 GHz
Output Power : 11.5 W
Package / Case : NI-400-3


Features:

Typical 2-carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA,Pout = 11.5 Watts Avg.,  Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.Power Gain ó 16 dB Drain Efficiency ó 27.7% IM3 @ 10 MHz Offset ó -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ó -40 dBc @ 3.84 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched, Controlled Q, for Ease of Use
Qualified Up to a Maximum of 32 VDDOperation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
Low Gold Plating Thickness on Leads, 40µ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.


 




Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +68 Vdc
Gate-Source Voltage VGS -0.5, +12 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 151
0.86
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C
CW Operation CW 50 W



Description

MRF6S21050LR3 is Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-tions. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.




Parameters:

Technical/Catalog InformationMRF6S21050LR3
VendorFreescale Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameNI-400
FET TypeN-Channel
Typical RF ApplicationCDMA
Typical RF ApplicationTDMA
Drain to Source Voltage (Vdss)28.0 V [Nom]
Power Dissipation11.500 W [Max]
PackagingTape & Reel, 13"
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MRF6S21050LR3
MRF6S21050LR3



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