MRF6S21140HR

The MRF6S21140HR is one kind of 2110-2170 MHz, 30 W AVG., 28 V 2xW-CDMA lateral N-channel RF power MOSFETs that designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. It can be used in TDMA, CDMA and multicarrier amplifier applications and Class AB fo r PCN - PCS/cel lular radi o and WLL applications.

Features of the MRF6S21140HR are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)low gold plating thickness on leads, 40" nominal;(3)designed for lower memory effects and wide instantaneous bandwidth applications;(4)lower thermal resistance package;(5)integrated ESD protection;(6)qualified up to a maximum of 32 VDD operation;(7)internally matched, controlled Q, for ease of use;(8)characterized with series equivalent large-signal impedance parameters.

The absolute maximum ratings of the MRF6S21140HR can be summarized as:(1)drain-source voltage:-0.5 to +68 Vdc;(2)gate-source voltage:-0.5 to +12 Vdc;(3)total device dissipation @ TC=25°C:500 W;(4)total derate above 25°C:2.9 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temperature:200 °C;(7)case operating temperature:150 °C.If you want to know more information such as the electrical characteristics about the MRF6S21140HR, please download the datasheet in www.seekic.com or www.chinaicmart.com .