Transistors RF MOSFET Power VHV6 10W Latrl N-Ch. Broadband MOSFET
MRF6V2010NBR5: Transistors RF MOSFET Power VHV6 10W Latrl N-Ch. Broadband MOSFET
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 110 V | Gate-Source Breakdown Voltage : | - 5 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272 EP |
Packaging : | Reel |
Technical/Catalog Information | MRF6V2010NBR5 |
Vendor | Freescale Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 50V |
Current Rating | 30mA |
Package / Case | TO-272-2 |
Packaging | Cut Tape (CT) |
Drawing Number | 375; 1337-04; NBR; 2 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF6V2010NBR5 MRF6V2010NBR5 MRF6V2010NBR5CT ND MRF6V2010NBR5CTND MRF6V2010NBR5CT |