Transistors RF MOSFET Power VHV6 10W Latrl N-Ch. Broadband MOSFET
MRF6V2010NBR5: Transistors RF MOSFET Power VHV6 10W Latrl N-Ch. Broadband MOSFET
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Drain-Source Breakdown Voltage : | 110 V | Gate-Source Breakdown Voltage : | - 5 V, 10 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-272 EP |
| Packaging : | Reel |
| Technical/Catalog Information | MRF6V2010NBR5 |
| Vendor | Freescale Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 50V |
| Current Rating | 30mA |
| Package / Case | TO-272-2 |
| Packaging | Cut Tape (CT) |
| Drawing Number | 375; 1337-04; NBR; 2 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MRF6V2010NBR5 MRF6V2010NBR5 MRF6V2010NBR5CT ND MRF6V2010NBR5CTND MRF6V2010NBR5CT |