Transistors RF MOSFET Power HV7 1.9GHZ 50W
MRF7S19170HR3: Transistors RF MOSFET Power HV7 1.9GHZ 50W
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 65 V | Gate-Source Breakdown Voltage : | - 6 V, 10 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-880 |
Packaging : | Reel |