Transistors RF MOSFET Power HV7 2.1GHZ WCDMA NI780HS
MRF7S21210HSR5: Transistors RF MOSFET Power HV7 2.1GHZ WCDMA NI780HS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Transistor Polarity : | N-Channel | ||
| Frequency : | 2.11 GHz to 2.17 GHz | Gain : | 18.5 dB | ||
| Output Power : | 63 W | Drain-Source Breakdown Voltage : | 65 V | ||
| Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | NI-780S-2 | Packaging : | Reel |