Transistors RF MOSFET Power HV8 2GHZ 165W NI780-4
MRF8P20165WHR3: Transistors RF MOSFET Power HV8 2GHZ 165W NI780-4
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.88 GHz to 2.025 GHz | Gain : | 16.3 dB at 1.995 GHz | ||
Output Power : | 28 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 125 C | ||
Package / Case : | NI-780S-4 | Packaging : | Reel |