Transistors RF MOSFET Power HV8 2.1GHZ 120W NI780HS
MRF8S21120HSR3: Transistors RF MOSFET Power HV8 2.1GHZ 120W NI780HS
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2.11 GHz to 2.17 GHz | Gain : | 17.6 dB at 2.17 GHz | ||
Output Power : | 28 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | 10 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-780S | Packaging : | Reel |