MRF9080R5

The MRF9080R5 is one kind of GSM 900 MHz, 75 W, 26 V lateral N-channel broadband RF power MOSFET that designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

Features of the MRF9080R5 are:(1)available with low gold plating thickness on leads. L Suffix indicates 40" nominal;(2)available in tape and reel. R3 suffix= 250 units per 56 mm, 13 inch reel;(3)characterized with series equivalent large-signal impedance parameters;(4)excellent thermal stability;(5)capable of handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 watts CW output power;(6)designed for maximum gain and insertion phase flatness;(7)integrated ESD protect-ion;(8)internally matched, controlled Q, for ease of use;(9)high gain, high efficiency and high linearity.

The absolute maximum ratings of the MRF9080R5 can be summarized as:(1)drain-source voltage:+65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)storage temperature range:-65 to +200 °C;(4)operating junction temperature:200 °C;(5)total device dissipation @ Tc=25°C:250 watts;(6)total derate above 25°C:1.43 W/°C.If you want to know more information such as the electrical characteristics about the MRF9080R5, please download the datasheet in www.seekic.com or www.chinaicmart.com .