MFG:MOT D/C:02+
MFG: MOT
D/C: 02+
Description: Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and b...
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 65 | Vdc |
| Gate-Source Voltage | VGS | - 0.5, +15 | Vdc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 250 1.43 |
Watts W/ |
| Storage Temperature Range | Tstg | - 65 to +150 | |
| Operating Junction Temperature | TJ | 200 |
MRF9085LSR3
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MRF9085LR3 is Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common-source amplifier applications in 26 volt base...
MRF9080SR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
The MRF9080R5 is one kind of GSM 900 MHz, 75 W, 26 V lateral N-channel broadband RF power MOSFET that designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier ...
MRF9080R3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
MRF9080LSR3 is Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for largesignal, commonsource amplifier applications in 26 volt base station equipment.
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