MFG:MOT Package Cooled:920-960MHZ 130W 26V D/C:07+
MFG: MOT
Package Cooled: 920-960MHZ 130W 26V
D/C: 07+
Description: Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadba...
| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDSS |
65 | Vdc |
| GateSource Voltage | VGS | - 0.5, +15 | Vdc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 298 1.7 |
Watts W/ |
| Storage Temperature Range | Tstg | 65 to +200 | |
| Operating Junction Temperature | TJ | 200 |
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
Output Power @ P1dB - 135 Watts
Power Gain - 16.5 dB @ 130 Watts Output Power
Efficiency - 48% @ 130 Watts Output Power
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, All Frequency Band, 130 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9130LR3
PDF/DataSheet Download
The MRF9130 is one kind of 880 MHz, 135 W, 26 V lateral N-channel broadband RF power MOSFET that designed for broadband commercial and industrial applications with frequencies from 865 MHz to 895 MHz. It is ideal for large- signal, common-source amplifier ap...
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