MRF9820T1

Features:

• Low Noise Figure: 1.5 dB @ 940 MHz, 1 mA
• Built In ESD Protection
• Does Not Require a Negative Supply Voltage
• RF Power Gain 16 dB @ 940 MHz, 1 mA
• High Third Order Intercept Point
• Industry Standard SOT143 Surface Mount Package
• Order MRF9820T1 for Tape and Reel Packaging.
     T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.


Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	VDS	6	Vdc
Gate 1Source Voltage	VG1S	4	Vdc
Gate 2Source Voltage	VG2S	4	Vdc
Drain Current - Continuous	ID	IDSS	-
Total Device Dissipation @ TC = 75 Derate above 75	PD	231 4.3	mW mW/
Storage Temperature Range	Tstg	55 to +150
Operating Channel Temperature	Tch	150

Description

The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device contains two enhancement mode MESFETs connected in cascode to allow access to both gates for gain control or injection of LO signals. This device is well suited for low voltage, low current frontend applications such as paging, cellular, GSM, DECT, and other portable wireless systems.