MRFG35002N6AT1 Selling Leads, Price trend , Freescale Semiconductor, MRFG35002N6AT1 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219203 Detail

MRFG35002N6AT1: Transistors RF GaAs 1.5W 6V GAAS FET PLD1.5

MRFG35002N6AT1 Data Sheet

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Part Number:: MRFG35002N6AT1
Mfg:: Freescale Semiconductor
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/4/26

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What is this?

MRFG35002N6R5 evaluate
TRANSISTOR RF 1.5W 6V POWER FET
MRFG35002N6T1 evaluate
US $3.68 - 3.68 / Piece

TRANSISTOR RF FET 3.5GHZ PLD-1.5
MRFG35003ANR5 evaluate
Transistors RF GaAs 3.5GHZ 3W 12V GAASPLD1.5

Product Details

Quick Details

Technology Type :	pHEMT	Frequency :	3.55 GHz
Gain :	10 dB	Drain Source Voltage VDS :	8 V
Gate-Source Breakdown Voltage :	- 5 V	Continuous Drain Current :	1.7 A
Maximum Operating Temperature :	+ 85 C	Mounting Style :	SMD/SMT
Package / Case :	PLD-1.5

Description

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Power Dissipation :
Mounting Style : SMD/SMT
Technology Type : pHEMT
Gate-Source Breakdown Voltage : - 5 V
Frequency : 3.55 GHz
Maximum Operating Temperature : + 85 C
Package / Case : PLD-1.5
Gain : 10 dB
Continuous Drain Current : 1.7 A
Drain Source Voltage VDS : 8 V

Features:

• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.

Specifications

Rating	Symbol	Value	Unit
Drain-source voltage	V_DSS	8	Vdc
Gate-source voltage	V_GSS	-5	Vdc
Storage temperature range	P_in	22	dBm
Storage temperature range	T_stg	-65 to +150
Channel temperature⁽¹⁾	T_ch	175

Parameters:

Technical/Catalog Information	MRFG35002N6AT1
Vendor	Freescale Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	pHEMT FET
Voltage - Rated	6V
Current Rating	65mA
Package / Case	PLD-1.5
Packaging	Tape & Reel (TR)
Drawing Number	375; 466-03 ; T; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MRFG35002N6AT1 MRFG35002N6AT1

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MRFG35002N6AT1

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