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MS1578

Features: · GOLD METALLIZATION· DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY· POUT = 150 W PEP· INTERNAL INPUT/OUTPUT MATCHING· COMMON EMITTER CONFIGURATION· 8.0dB GAIN @ 900 MHz· MAX IMD -28dBc @ 150 W PEP· 5:1 VSWR CAPABILITY @ RATED CONDITIONS· 3 dB OVERDRIVE CAPABILITYPinoutSp...

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SeekIC No. : 004427244 Detail

MS1578: Features: · GOLD METALLIZATION· DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY· POUT = 150 W PEP· INTERNAL INPUT/OUTPUT MATCHING· COMMON EMITTER CONFIGURATION· 8.0dB GAIN @ 900 MHz· M...

MS1578 Data Sheet

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Part Number:
MS1578
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/27

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Product Details

Description



Features:

·  GOLD METALLIZATION
·  DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY
·  POUT = 150 W PEP
·  INTERNAL INPUT/OUTPUT MATCHING
·  COMMON EMITTER CONFIGURATION
·  8.0dB GAIN @ 900 MHz
·  MAX IMD -28dBc @ 150 W PEP
·  5:1 VSWR CAPABILITY @ RATED CONDITIONS
·  3 dB OVERDRIVE CAPABILITY


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 28 V
VCEO Collector-emitter Voltage 65 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 25 A
PDISS Power Dissipation 300 W
TJ Junction Temperature +200
TSTG Storage Temperature -65 to +150



Description

THE MS1578 IS A GOLD METALLIZED, EPITAXIAL SILICON, NPN PLANAR TRANSISTOR DESIGNED FOR HIGH LINEARITY CLASS AB OPERATION. DIFFUSED EMITTER BALLAST RESISTORS PROVIDE MAXIMUM RUGGEDNESS AND RELIABILITY FOR 900 MHz CELLULAR BASE STATION APPLICATIONS.




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