Features: · REFRACTORY/GOLD METALLIZATION· EMITTER SITE BALLASTED· 5:1 VSWR CAPABILITY· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC HERMETIC PACKAGE· POUT = 6.0 W MIN. WITH 9.3 dB GainPinoutSpecifications Symbol Parameter Value Unit PDISS Power Dissip...
MS2211: Features: · REFRACTORY/GOLD METALLIZATION· EMITTER SITE BALLASTED· 5:1 VSWR CAPABILITY· LOW THERMAL RESISTANCE· INPUT/OUTPUT MATCHING· OVERLAY GEOMETRY· METAL/CERAMIC HERMETIC PACKAGE· POUT = 6.0 W ...
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| Symbol | Parameter | Value | Unit |
| PDISS | Power Dissipation * (TC 75) | 25 | W |
| IC | Device Current * | 0.9 | A |
| VCC | Collector - Supply Voltage * | 32 | V |
| TJ | Junction Temperature (Pulsed RF Operation) | 250 | |
| TSTG | Storage Temperature | - 65 to + 200 |
The MS2211 is designed for specialized avionics applications,including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.