MS28F016SV General Description
The VS/MS28F016SV is a high-performance, 16-Mbit (16,777,216-bit) block erasable, non-volatile random access memory, organized as either 1 Mword x 16 or 2 Mbyte x 8. The VS/MS28F016SV includes thirty-two 64-KB (65,536 byte) blocks or thirty-two 32-KW (32,768 word) blocks. A chip memory map is shown in Figure 3.
The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and result in greater product reliability and ease of use.
The VS/MS28F016SV incorporates SmartVoltage technology, providing VCC operation at both 3.3V and 5.0V and program and erase capability at VPP e 12.0V or 5.0V. Operating at VCC e 3.3V, the VS/MS28F016SV consumes approximately one-half the power consumption at 5.0V VCC, while 5.0V VCC provides highest read performance capability. VPP e 5.0V operation eliminates the need for a separate 12.0V converter, while VPP e 12.0V maximizes write/erase performance. In addition to the flexible program and erase voltages, the dedicated VPP gives complete code protection with VPP VPPLK.
Depending on system design specifications, the VS/MS28F016SV is capable of supporting
-80 ns access times with a VCC of 5.0V g5% and loading of 30 pF
-85 ns access times with a VCC of 5.0V g10% and loading of 100 pF
-120 ns access times with a VCC of 3.3V g5% and loading of 50 pF
A 3/5# input pin configures the device's internal circuitry for optimal 3.3V or 5.0V Read/Write operation.
A Command User Interface (CUI) serves as the system interface between the microprocessor or microcontroller and the internal memory operation.
Internal Algorithm Automation allows Byte/Word Writes and Block Erase operations to be executed using a Two-Write command sequence to the CUI in the same way as the VE28F008 or M28F008 8-Mbit FlashFile memory.
A super-set of commands has been added to the basic VE28F008 or M28F008 command-set to achieve higher write performance and provide additional capabilities. These new commands and features include:
`Page Buffer Writes to Flash
`Command Queuing Capability
`Automatic Data Writes during Erase
`Software Locking of Memory Blocks
`Two-Byte Successive Writes in 8-bit Systems
`Erase All Unlocked Blocks
MS28F016SV Maximum Ratings
MS28F016SV Features
The VS/MS28F016SV is backwards compatible with the VE28F008 and M28F008 and offers the following enhancements:
·SmartVoltage Technology
-Selectable 5.0V or 12.0V VPP
· VPP Level Bit in Block Status Register
·Additional RY/BY#Configuration
-Pulse-On-Write/Erase
·Additional Upload Device Information Command Feedback
-Device Revision Number
-Device Proliferation Code
-Device Configuration Code
·x8/x16 Architecture
·Block Locking
·2 Page Buffers
·Instruction Queuing
MS28F016SV Connection Diagram
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