MS5F 6061

      The MS5F 6061 is applied to IGBT-Module named 2MBI100U4A-120. VCES(Collector-Emitter voltage)=1200V, VGES(Gate-Emitter voltage)=20V, Collector current(Ic(Tc=25/80)=150/100A; Icp(1ms, Tc=25/80=300/200A; -Ic=100A; -Ic pulse=100A)), Pc(Collector Power Dissipation, 1 device)=540W, Tj(Junction temperature)=+150, Tstg(Storage temperature)=-40 to +125.
      In the aspect of electticity of MS5F 6061 got @ tj=25, ICES(Zero gate voltage collector current, @VGE=0V VCE=1200V)=1.0(max)mA, IGES(Gate-Emitter leakage current, @ VCE=0V, VGE=±20V)=200(max)nA, VGE(th)(Gate-Emitter threshold voltage, @VCE=20V Ic=100mA)=4.5/6.5/8.5V, Cies(Input capacitanc, VCE=10V,VGE=0V,f=1MHz)=11(typ)nF, ton/tr/tr(i)(Turn-on time, @ Vcc=600V, Ic=100A, VGE=±15V, RG=5.6)=0.32/1.20, 0.10/0.60, 0.03us, trr(Reverse recovery time, IF=100A)=0.35us, R lead(Lead resistance, terminal-chip(Biggest internal terminal resistance among arm))=1.39m, Rth(j-c)(Thermal resistance(1device))=0.23(IGBT)/0.40(FWD)oC/W, Rth(c-f)(Contact Thermal resistance(This is the value which is defined mounting on the additional cooling fin with thermal compound.), with Thermal Compound )=0.05/W.
      Some Storage and transportation of the MS5F 6061 are Avoid exposure to corrosive gases and dust, The module should be stored at a standard temperature of 5 to 35and humidity of 45 to 75%, Store modules in a place with few temperature changes in order to avoid condensation on the module surface, Avoid excessive external force on the module, Do not drop or otherwise shock the modules when transporting, Store modules with unprocessed terminals.