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MSA-0170

Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Hermetic Gold-ceramic Microstrip PackageSpecifications Parameter Absolute Maximum[1] Device Current 40 mA Power ...

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MSA-0170: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Hermetic Gold-ceramic Mic...

MSA-0170 Data Sheet

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Part Number:
MSA-0170
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Cascadable 50 W Gain Block
• 3 dB Bandwidth: DC to 1.3 GHz
• High Gain: 18.5 dB Typical at 0.5 GHz
• Unconditionally Stable (k>1)
• Hermetic Gold-ceramic Microstrip Package


Specifications

Parameter Absolute Maximum[1]
Device Current 40 mA
Power Dissipation[2,3] 200 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature 65 to 200°C

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8 mW/°C for TC > 175°C.
4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.


Description

The MSA-0170 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.

The MSA-0170 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.




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