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Part Number: MSA-0435

 

 

 

 

Description: The MSA-0435 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) hous...


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MSA-0435 General Description


The MSA-0435 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.

The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (package 36) as MSA-0436.

MSA-0435 Maximum Ratings

Parameter Absolute Maximum[1]
Device Current 100 mA
Power Dissipation[2,3] 650 mW
RF Input Power
+13 dBm
Junction Temperature 200
Storage Temperature[4] 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 7.1 mW/ for TC > 109.
4. Storage above +150 may tarnish the leads of this package making it difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.

MSA-0435 Features

• Cascadable 50 W Gain Block
• 3 dB Bandwidth: DC to 3.8 GHz
• 12.5 dBm Typical P1 dB at 1.0 GHz
• 8.5 dB Typical Gain at 1.0 GHz
• Unconditionally Stable (k>1)
• Cost Effective Ceramic Microstrip Package

MSA-0435 datasheet

MSA-0435
PDF/DataSheet Download

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