MSA-0786

Features:

• Cascadable 50 Gain Block
• Low Operating Voltage: 4.0 V Typical V_d
• 3 dB Bandwidth: DC to 2.0 GHz
• 12.5ÊdB Typical Gain at 1.0ÊGHz
• Unconditionally Stable (k>1)
• Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available_[1]




Specifications

Parameter	Absolute Maximum[1]
Device Current	60 mA
Power Dissipation[2,3]	275 mW
RF Input Power	+13 dBm
Junction Temperature	150
Storage Temperature	65 to 150

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25.
3. Derate at 8.3 mW/ for T_C > 117
4. See MEASUREMENTS section "Thermal Resistance" for more information.




Description

The MSA-0786 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

The MSA-0786 is fabricated using HP's 10 GHz fT, 25GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.