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MFG:HP  D/C:N/A  

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Part Number: MSA-0835

 

MFG: HP

 

D/C: N/A

Description: The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) hous...


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MSA-0835 General Description


The MSA-0835 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 W gain block above 0.5 GHz and can be used as a high gain transistor below this frequency.

Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

Available in cut lead version (packageÊ 36) as MSA-0836.

MSA-0835 Maximum Ratings

Parameter Absolute Maximum[1]
Device Current 80 mA
Power Dissipation[2,3] 750 mW
RF Input Power
+13 dBm
Junction Temperature 200
Storage Temperature[4] 65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25.
3. Derate at 5.7 mW/ for TC > 69.
4. Storage above +150 may tarnish the leads of this package making it difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.

MSA-0835 Features

• Usable Gain to 6.0Ê GHz
• High Gain:
    32.5 dB Typical at 0.1 GHz
    23.0 dB Typical at 1.0 GHz
• Low Noise Figure:
    3.0 dB Typical at 1.0Ê GHz
• Cost Effective Ceramic
    Microstrip Package

MSA-0835 datasheet

MSA-0835
PDF/DataSheet Download

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