RF Amplifier Amplifier Si RFIC
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| Type : | General Purpose Amplifier | Operating Frequency : | 25000 MHz |
| Output Intercept Point : | 30 dBm | Operating Supply Voltage : | 6.5 V |
| Supply Current : | 100 mA | Maximum Operating Temperature : | + 200 C |
| Mounting Style : | SMD/SMT | Package / Case : | BeO |
| Packaging : | Bulk |
| Parameter | Absolute Maximum[1] |
| Device Current | 100 mA |
| Power Dissipation[2,3] | 650 mW |
| RF Input Power | +13 dBm |
| Junction Temperature | 200 |
| Storage Temperature | 65 to 200 |
The MSA-1120 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic BeO disk package for good thermal characteristics. This MMIC is designed for high dynamic range in either 50 or 75Ê W systems by combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems.
The MSA-1120 is fabricated using HP's 10 GHz fT, 25Ê GHz f MAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
| Technical/Catalog Information | MSA-1120 |
| Vendor | Avago Technologies US Inc. |
| Category | RF and RFID |
| Package / Case | 100 mil |
| Voltage - Supply | 4.5V ~ 6.5V |
| Current - Supply | 40mA ~ 75mA |
| Gain | 11.5dB ~ 13.5dB |
| Frequency | 50MHz ~ 1.6GHz |
| RF Type | ISM |
| Packaging | Bulk |
| Noise Figure | 3.5dB ~ 4.5dB |
| P1db | 16dBm ~ 17.5dBm |
| Test Frequency | 500MHz |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MSA 1120 MSA1120 |