Transistors Bipolar (BJT) 500mA 60V PNP
MSB710-RT1G: Transistors Bipolar (BJT) 500mA 60V PNP
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V | ||
| Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 0.5 A | ||
| DC Collector/Base Gain hfe Min : | 120 at 150 mA at 10 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-59 | Packaging : | Reel |
| Technical/Catalog Information | MSB710-RT1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SC-59-3, SMT3, SOT-346, TO-236 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MSB710 RT1G MSB710RT1G |