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Part Number: MSC2383657D-xxDS20

 

 

 

 

Description: The MSC2383657D-xxBS20/DS20 is a fully decoded, 8,388,608-word x 36-bit CMOS dynamic random access mem...


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MSC2383657D-xxDS20 General Description


The MSC2383657D-xxBS20/DS20 is a fully decoded, 8,388,608-word x 36-bit CMOS dynamic random access memory module composed of sixteen 16Mb DRAMs (4Mx4) in SOJ packages and four 8Mb DRAMs (4Mx2) in SOJ packages mounted with twenty decoupling capacitors on a 72-pin glass epoxy single in-line package. This module supports any application where high density and large capacity of storage memory are required.

MSC2383657D-xxDS20 Maximum Ratings

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -1.0 to +7.0 V
Voltage on VCC Supply Relative to VSS Vcc -1.0 to +7.0 V
Short circuit current IOS 50 mA
Power dissipation PD* 20 W
Operating temperature Topr 0 to 70 °C
Storage temperature Tstg - 40 to 125 °C

*: Ta=25°C

MSC2383657D-xxDS20 Features

· 8,388,608-word x 36-bit organization
· 72-pin Single In-Line Memory Module
  - MSC2383657D-xxBS20 : Gold tab
  - MSC2383657D-xxDS20 : Solder tab
· Single +5V supply ± 10% tolerance
· Input : TTL compatible
· Output : TTL compatible, 3-state
· Refresh : 2048cycles/32ms
· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability
· Fast page mode with EDO capability
· Multi-bit test mode capability

MSC2383657D-xxDS20 datasheet

MSC2383657D-xxDS20
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