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MSC80185

Application·EMITTER BALLASTED·CLASS A LINEAR OPERATION·COMMON EMITTER·VSWR CAPABILITY 20:1 @ RATED CONDITIONS ·ft 3.2 GHz TYPICAL·NOISE FIGURE 12.0 dB @ 2 GHz·POUT = 28 dBm MIN. @ 2.0 GHzSpecifications Symbol Parameter Value Unit PDISS Power Dissipation (see Safe Area) - W IC Dev...

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MSC80185: Application·EMITTER BALLASTED·CLASS A LINEAR OPERATION·COMMON EMITTER·VSWR CAPABILITY 20:1 @ RATED CONDITIONS ·ft 3.2 GHz TYPICAL·NOISE FIGURE 12.0 dB @ 2 GHz·POUT = 28 dBm MIN. @ 2.0 GHzSpecificati...

MSC80185 Data Sheet

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Part Number:
MSC80185
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

·EMITTER BALLASTED
·CLASS A LINEAR OPERATION
·COMMON EMITTER
·VSWR CAPABILITY 20:1 @ RATED CONDITIONS
·ft 3.2 GHz TYPICAL
·NOISE FIGURE 12.0 dB @ 2 GHz
·POUT = 28 dBm MIN. @ 2.0 GHz


Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation    (see Safe Area) - W
IC Device Bias Current 300 mA
VCE Collector-Emitter Bias Voltage* 20 V
TJ Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The MSC80185 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.




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