Purchase MSQA6V1W5T2, In-stock MSQA6V1W5T2 From SeekIC.
MFG:ON D/C:07+
Part Number: MSQA6V1W5T2
MFG: ON
D/C: 07+
Description: This quad monolithic silicon voltage suppressor is designed for applications requiring transient overv...
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MSQA6V1W5T2
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DataSheet
General Description
MSQA6V1W5T2 General Description
This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.
MSQA6V1W5T2 Maximum Ratings
| Characteristic | Symbol |
Value |
Unit |
| Peak Power Dissipation @ 20s @TA 25 (Note 1) | Ppk |
150 |
W |
| Steady State Power − 1 Diode (Note 2) | PD |
385 |
mW |
| Thermal Resistance Junction to Ambient Above 25, Derate | RJA |
325 3.1 |
/W mW/ |
| Maximum Junction Temperature | TJmax |
150 |
|
| Operating Junction and Storage Temperature Range | TJ Tstg |
−55 to +150 |
|
| ESD Discharge MIL STD 883C − Method 3015−6 IEC1000−4−2, Air Discharge IEC1000−4−2, Contact Discharge |
VPP |
16 16 9 |
kV |
| Lead Solder Temperature (10 seconds duration) | TL |
260 |
MSQA6V1W5T2 Features
• SC88A Package Allows Four Separate Unidirectional Configurations
• Low Leakage < 1 A @ 3 Volt
• Breakdown Voltage: 6.1 Volt − 7.2 Volt @ 1 mA
• Low Capacitance (90 pF typical)
• ESD Protection Meeting IEC1000−4−2
• Low Leakage < 1 A @ 3 Volt
• Breakdown Voltage: 6.1 Volt − 7.2 Volt @ 1 mA
• Low Capacitance (90 pF typical)
• ESD Protection Meeting IEC1000−4−2
MSQA6V1W5T2 Connection Diagram
MSQA6V1W5T2
PDF/DataSheet Download
- Datasheet: MSQA6V1W5T2
- File Size: 47396 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
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