MST6130

The MST6130 of optoswitches is designed to allow the user maximum flexibility in his application.Each switch concsists of an infra-red emitting diode facing an NPN silicon photo-transistor across a 0.125" (3.18mm) gap.Switching occurs whenever an IR-opaque object passes through the slot.A polysulfone housing of MST6130 provides excellent chemical and solvent resistance while allowing a fully encloused design that keeps out dust and dirt.

The MST6130 has 6 features.The first one is full enclosed design.The second one is choice of 4 mounting configurations.The third one is choice of 3 detector apertures.The fourth one is choice of 3 CTR (SAT) levels.The fifth one is choice of 2 lead spacing.The sixth one is superior polysulfone material.

The MST6130 has some absolute maximum ratings.The storage temperature range is -55 to 100 .The operating temperature range is -55 to 100 .The lead temperature (soldering 5 sec.) is 260 .Input diode:Power dissipation is 100 mW.Derate linearly 1.33 mW/  above 25  ambient continous forward current is 50 mA.The peal forward current (1sec PW,300 pps) is 1A.Output transistor:Power dissipation is 150 mW.Derate linearly 2 mW/ above 25 ambient continous collector current is 100 mA.Collector-emitter voltage is 30 V.Emitter-collector voltage is 5V.