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Part Number: MT28F160C34

 

 

 

 

Description: The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 1...


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MT28F160C34 General Description


The MT28F160C34 is a nonvolatile, electrically blockerasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits).

The MT28F160C34 is manufactured on 0.22m process technology in a 46-ball FBGA package.

The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system processor of secondary tasks. The WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks.

The device is equipped with 128 bits of one time programmable (OTP) area. The soft protection feature for blocks will mark them as read-only by configuring soft protection registers with command sequences.

MT28F160C34 Maximum Ratings

Supply Voltage Range, VCC ..................... -0.6V to +4.0V3
Supply Voltage Range, VPP .................... -0.6V to +13.0V3
Input Voltage Range ................................. -0.6V to +4.0V
Output Voltage Range ............................. -0.6V to +4.0V4
Storage Temperature Range, TSTG ........ -65ºC to +150ºC

MT28F160C34 Features

• Thirty-nine erase blocks:
     Eight 4K-word parameter blocks
     Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
    3.3V ±5% VCC
    3.3V ±5% VCCQ
    1.65V3.465V and 12V VPP
• Address access times:
    90ns at 3.3V ±5%
• Low power consumption:
    Standby and deep power-down mode < 1A
    (typical ICC)
    Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1s typical)
• 128-bit OTP area for security purposes
• Industry-standard command set compatibility
• Software/hardware block protection

MT28F160C34 datasheet

MT28F160C34
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