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MFG:MICRON  Package Cooled:TSSOP  

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Part Number: MT28F800B5

 

MFG: MICRON

Package Cooled: TSSOP

 

Description: The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), prog...


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MT28F800B5 General Description


The MT28F008B5 (x8) and MT28F800B5 (x16/x8) are nonvolatile, electrically block-erasable (Flash), programmable read-only memories containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron's advanced 0.18µm CMOS floating-gate process.

The MT28F008B5 and MT28F800B5 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

MT28F800B5 Maximum Ratings

Voltage on VCC Supply Relative to VSS ....-0.5V TO +6V**
Input Voltage Relative to VSS ..................-0.5V TO +6V**
VPP Voltage Relative TO VSS ...................-0.5V TO +5.5V†
RP# or A9 Pin Voltage Relative to Vss... -0.5V to +12.6V†
Temperature Under Bias.............................-40 to +85
Storage Temperature (plastic) .................-55 to +125

Power Dissipation .......................................................1W

MT28F800B5 Features

• Eleven erase blocks:
    16KB/8K-word boot block (protected)
    Two 8KB/4K-word parameter blocks
• Eight main memory blocks
• Smart 5 technology (B5):
    5V ±10% VCC
    5V ±10% VPP application/
     production programming1
• Advanced 0.18µm CMOS floating-gate process
• Compatible with 0.3µm Smart 5 device
• Address access time: 80ns
• 100,000 ERASE cycles
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and SOP packaging options
• Byte- or word-wide READ and WRITE
(MT28F800B5, 1 Meg x 8/512K x 16)

MT28F800B5 Connection Diagram

MT28F800B5  Connection DiagramMT28F800B5  Connection Diagram

MT28F800B5 datasheet

MT28F800B5
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