MT3S03AU

The MT3S03AU is a kind of silicon NPN planar epitaxial transistor for VHF-UHF band low noise amplifier applications. There are some features as follows: (1)low noise figure: NF=1.4 dB; (2)high gain: gain=8 dB at f=2 GHz.

What comes next is about the absolute maximum ratings of MT3S03AU: (1)collector to base voltage, VCBO: 10 V; (2)collector to emitter voltage, VCEO: 5 V; (3)emitter to base voltage, VEBO: 2 V; (4)collector current, IC: 40 mA; (5)base collector, IB: 10 mA; (6)collector power dissipation, PC: 100 mW; (7)junction temperature, Tj: 125; (8)storage temperature, Tstg: -55 to +125.

The following is about the electrical characteristics of MT3S03AU at Ta=25: (1)collector cutoff current, ICBO: 0.1A max at VCB=5 V, IE=0; (2)emittor cutoff current, IEBO: 1A max at VEB=1 V, IC=0; (3)DC current gain, hFE: 80 min and 160 max at VCE=1 V, IC=5 mA; (4)reverse transfer capacitance, Cre: 0.75 pF typ and 11 pF max at VCB=1 V, f=1 MHz, IE=0. Then is about the microwave characteristics at Ta=25: (1)transition frequency, fT: 5 GHz min and 7 GHz typ at VCE=1 V, IC=5 mA; 7 GHz min and 10 GHz typ at VCE=3 V, IC=10 mA; (2)insertion gain, |S21e|2: 5.5 dB typ at VCE=1 V, f=2 GHz, IC=5 mA; 6 dB min and 8 dB typ at VCE=3 V, f=2 GHz, IC=20 mA; (3)noise figure, NF: 1.7 dB typ and 3 dB max at VCE=1 V, f=2 GHz, IC=5 mA; 1.4 dB typ and 2.2 dB max at VCE=3 V, f=2 GHz, IC=7 mA.