Purchase MT46H8M32LF 2, In-stock MT46H8M32LF 2 From SeekIC.
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MT46H8M32LF 2
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Suppliers
DataSheet
General Description
MT46H8M32LF 2 Features
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write dataone mask per byte
• Programmable burst lengths: 2, 4, 8, 16 or full page
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write dataone mask per byte
• Programmable burst lengths: 2, 4, 8, 16 or full page
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Deep power-down (DPD)
• Selectable output drive (DS)
MT400
PDF/DataSheet Download
- Datasheet: MT400
- File Size: 75700 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
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