MT46V16M16P-6T

The MT46V16M16P-6T is one member of the 512Mb DDR SDRAM which designed as high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. MT46V16M16P-6T operates from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.Also it provides for programmable READ or WRITE burst lengths of 2, 4, or 8 locations.

Features of the MT46V16M16P-6T are:(1)internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle;(2)differential clock inputs (CK and CK#);(3)VDD=+2.5V±0.2V, VDDQ=+2.5V±0.2V;(4)commands entered on each positive CK edge;(5)DLL to align DQ and DQS transitions with CK;(6)four internal banks for concurrent operation;(7)data mask (DM) for masking write data (x16 has two-one per byte);(8)programmable burst lengths:2, 4, or 8;(9)concurrent auto precharge option is supported;(10)auto refresh and self refresh modes.

The absolute maximum ratings of the MT46V16M16P-6T can be summarized as:(1)VDD supply voltage relative to Vss:-1V to +3.6V;(2)VDDQ supply voltage relative to Vss:-1V to +3.6V;(3)I/O pins voltage relative to Vss:-0.5V to VDDQ+0.5V;(4)operating temperature, TA (ambient):0°C to +70°C;(5)storage temperature (plastic):-55°C to +150°C;(6)power dissipation:1 W;(7)short circuit output current:50 mA.If you want to know more information such as the electrical characteristics about the MT46V16M16P-6T,please download the datasheet in www.seekic.com or www.chinaicmart.com .