MTB30P06VT4G

MOSFET PFET D2PAK 60V 30A 80mOhm

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MTB30P06VT4G: MOSFET PFET D2PAK 60V 30A 80mOhm

floor Price/Ceiling Price

US $ .71~1.26 / Piece | Get Latest Price
Part Number:
MTB30P06VT4G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • 500~800
  • Unit Price
  • $1.26
  • $1.02
  • $.92
  • $.71
  • $.71
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 80 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 30 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 80 mOhms


Parameters:

Technical/Catalog InformationMTB30P06VT4G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs80 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2190pF @ 25V
Power - Max3W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTB30P06VT4G
MTB30P06VT4G
MTB30P06VT4GOSDKR ND
MTB30P06VT4GOSDKRND
MTB30P06VT4GOSDKR



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