MFG:ON Package Cooled:05+ D/C:TO-263
MFG: ON
Package Cooled: 05+
D/C: TO-263
Description: This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and sw...
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDSS | 600 | Vdc |
| DrainGate Voltage (RGS = 1.0 M) | VDGR | 600 | Vdc |
| GateSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Pulsed |
ID ID IDM |
3.0 2.4 14 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TA = 25(1) |
PD | 75 0.6 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 |
MTB3N60E
PDF/DataSheet Download
The MTB3N60Dis designed to withstand high energy in the avalanche mode and switch efficiently. The MTB3N60Dalso offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM mot...
The MTB3N120E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB3N120Euses a...
The MTB3N120D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. The MTB3N120Duses a...
The MTB3N100E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage M...
The MTB3N100D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage M...
MTB36N06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTB3...
Price: 18.8-18.85 USD
MCU, 208-LQFP, 166 MHz, ARM9 processor, 3.96V, 2W, ±10mA, 16-kbyte Instruction Cache
Price: 0.1-0.1 USD
1 Mbit, 5.0 Volt-only, Flash memory, 200 mA Output Short Circuit Current, Single power supply oper...
Price: 0.9-1.3 USD
high power NPN silicon transistors, 100-150 volts, 200 watts
Price: 2.5-3 USD
MIXED SIGNAL MICROCONTROLLER, LQFP-64, 1.8V to 3.6V Supply-Voltage Range, Brownout Detector
Price: 5.38-5.5 USD
programmable 4-channel PCM CODEC, 1 FSK generator, Microprocessor Interface, +5 V single power su...
Price: 40-50 USD
isolation buffer amplifier, 1500Vrms, 24-pin DIP
Price: 0.9-1 USD
16-Mbit, page-erasable serial, flash memory, SOP-8
Price: 1-3 USD
a monolithic integrated circuit ,TO-220, ISOWATT220, TO-3, D2PAK
Price: 9-10 USD
D-subminiature Metal Shell, DIP, Minimum 1250V RMS sea level, 2.7 milliohms maximum
Price: 1-2 USD
Rectifier Diode Modules, 600A, 245000A2s, 2.5V, controlled axial lifetime technology
Price: 1-10 USD
ARM Thumb Microcontroller, 217-LFBGA, 32BIT, 8K, 90 MHz, 1.8 to 3.3 V
Price: 0-0 USD
Ultralow Offset, Voltage Operational Amplifier, state-of-the-art
