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Part Number: MTB4N80E

 

MFG: ON

Package Cooled: 05+

D/C: TO-263

Description: The D2PAK package has the capability of housing a larger die than any existing surface moun...


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MTB4N80E General Description


The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTB4N80E Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
800
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
800
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
4.0
2.9
12
Adc
Apk
Total Power Dissipation
Derate above 25
Total Power Dissipation @ TA = 25, when mounted with the minimum recommended pad size
PD
125
1.0
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 8.0Apk, L = 10mH, RG = 25 )
EAS
320
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient, when mounted with the minimum recommended pad size
RJC
RJA
RJA
1.0
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits ntirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

MTB4N80E Features

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number

MTB4N80E datasheet

MTB4N80E
PDF/DataSheet Download

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