MTB4N80E General Description
MTB4N80E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number
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