MFG:MOT/ON Package Cooled:TO-263 D/C:05+
MFG: MOT/ON
Package Cooled: TO-263
D/C: 05+
Description: This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capab...
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
800 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
800 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
4.0 2.9 12 |
Adc Apk |
| Total Power Dissipation Derate above 25 Total Power Dissipation @ TA = 25, when mounted with the minimum recommended pad size |
PD |
125 1.0 2.5 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 8.0Apk, L = 10mH, RG = 25 ) |
EAS |
320 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted with the minimum recommended pad size |
RJC RJA RJA |
1.0 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
MTB4N80E1
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