Purchase MTB50N06D, In-stock MTB50N06D From SeekIC.
Part Number: MTB50N06D
Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of stan...
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MTB50N06D
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General Description
MTB50N06D General Description
TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTB50N06D Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
±20 ±25 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
42 30 147 |
Adc Apk |
| Total Power Dissipation @ 25 Derate above 25 Total Power Dissipation @ TA = 25 (1) |
PD |
125 0.83 3.0 |
Watts W/ Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
|
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25Vdc, VGS = 10 Vdc, Peak IL =42 Apk, L = 0.454 mH, RG = 25 ) |
EAS |
400 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1) |
RJC RJA RJA |
1.2 62.5 50 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
Designer's is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
MTB50N06D Features
New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on)Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETs
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
MTB001
PDF/DataSheet Download
- Datasheet: MTB001
- File Size: 363416 KB
- Manufacturer: SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
- Click here to Download
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