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MTB50P03HDLG

MOSFET PFET 30V 50A

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SeekIC No. : 00163567 Detail

MTB50P03HDLG: MOSFET PFET 30V 50A

MTB50P03HDLG Data Sheet

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Part Number:
MTB50P03HDLG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 25 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Rail    

Description

Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 50 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 25 mOhms at 5 V


Parameters:

Technical/Catalog InformationMTB50P03HDLG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs25 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds 4900pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTB50P03HDLG
MTB50P03HDLG
MTB50P03HDLGOS ND
MTB50P03HDLGOSND
MTB50P03HDLGOS



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