MTD10N10ELT4

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Cut Tape (CT)
Gate Charge (Qg) @ Vgs: 15nC @ 5V
Power - Max: 1.75W
Manufacturer: ON Semiconductor
Supplier Device Package: DPAK-3
Input Capacitance (Ciss) @ Vds: 1040pF @ 25V
Rds On (Max) @ Id, Vgs: 220 mOhm @ 5A, 5V


Parameters:

Technical/Catalog Information	MTD10N10ELT4
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	220 mOhm @ 5A, 5V
Input Capacitance (Ciss) @ Vds	1040pF @ 25V
Power - Max	1.75W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTD10N10ELT4 MTD10N10ELT4 MTD10N10ELT4OSDKR ND MTD10N10ELT4OSDKRND MTD10N10ELT4OSDKR