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MFG:ON  Package Cooled:TO-252/251  D/C:06+  

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Part Number: MTD20N06HD

 

MFG: ON

Package Cooled: TO-252/251

D/C: 06+

Description: This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new en...


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MTD20N06HD General Description


This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD20N06HD Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
20
16
60
Adc

Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ 25°C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10Vdc, PEAK IL =20Apk, L = 0.3mH, RG = 25)
EAS
60
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient, when mounted to minimum recommended pad size
RJC
RJA
RJA
3.13
100
71.4
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

MTD20N06HD Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

MTD20N06HD datasheet

MTD20N06HD
PDF/DataSheet Download

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