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MFG:ON  Package Cooled:SOT252  D/C:03+  

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Part Number: MTD20N06HDL

 

MFG: ON

Package Cooled: SOT252

D/C: 03+

Description: This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes....


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MTD20N06HDL General Description


This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.

MTD20N06HDL Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 10 ms)
VGS
VGSM
± 15
± 20
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
20
12
60
Adc

Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, PEAK IL =20Apk, L = 10mH, RG = 25)
EAS
200
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient when mounted to minimum recommended pad size
RJC
RJA
RJA
3.13
100
71.4
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
EFET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

MTD20N06HDL Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Available in Insertion Mount, Add 1 or 1 to Part Number

MTD20N06HDL datasheet

MTD20N06HDL
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