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MFG:ON  Package Cooled:05+  D/C:TO-252  

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MTD Series Datasheet download

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Part Number: MTD20N06V

 

MFG: ON

Package Cooled: 05+

D/C: TO-252

 

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MTD20N06V Maximum Ratings

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10ms)

VGS
VGSM

±20
±25


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse (tp10 s)
ID
ID
IDM
20
13
70

Adc

Apk

Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
PD
60
0.4
2.1
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ,Tstg
55 to 175
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 1.0 mH, RG = 25)
EAS
200
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient(1)
RJC
RJA
RJA
2.5
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C

MTD20N06V Features

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel,Add T4 Suffix to Part Number

MTD20N06V datasheet

MTD20N06V
PDF/DataSheet Download

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