MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and c...
This advanced highcell density HDTMOS EFET is designed to withstand high energy in the avalanche and commutation modes.The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage,highspeed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
• Ultra Low RDS(on), HighCell Density, HDTMOS
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit, Tape & Reel, Add T4 Suffix to Part Number
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp10ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
15 9.0 45 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
72 0.58 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 15 Apk, L = 2.7 mH, RG = 25) |
EAS |
300 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient,when mounted with the minimum recommended pad size |
RJC RJA RJA |
1.73 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
MTD20P06HDL
PDF/DataSheet Download
The MTD20P03HDL is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power su...
The MTD20P03is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power suppli...
The MTD20N06HDL is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for lowvoltage, highspeed switching applications in power suppl...
The MTD20N06HDis designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supp...
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