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MFG:ON  Package Cooled:05+  D/C:TO-252  

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Part Number: MTD5P06V

 

MFG: ON

Package Cooled: 05+

D/C: TO-252

Description: TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. Thi...


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MTD5P06V General Description


TMOS V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD5P06V Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current - Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse (tp  10 s)
ID
ID
IDM
5
4
18
Adc

Apk
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (1)
PD
40
0.27
2.1
Watts
W/°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 175
°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25)
EAS
125
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
3.75
100
71.4
°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.

MTD5P06V Features

• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

MTD5P06V datasheet

MTD5P06V
PDF/DataSheet Download

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