MTD5P06V

Features:

• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	60	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	60	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms)	VGS VGSM	± 15 ± 25	Vdc Vpk
Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (tp  10 s)	ID ID IDM	5 4 18	Adc Apk
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1)	PD	40 0.27 2.1	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 175	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25)	EAS	125	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient (1)	RJC RJA RJA	3.75 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET, Designer's and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.

Description

MTD5P06V is a new technology designed to achieve an onresistance area product about onehalf that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS EFET designs, MTD5P06V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.