MTD6N15-1 General Description
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
MTD6N15-1 Maximum Ratings
MTD6N15-1 Features
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
MTD6N15-1 Connection Diagram
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