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MFG:MOT/ON  Package Cooled:TO  

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Part Number: MTD6N15-1

 

MFG: MOT/ON

Package Cooled: TO

 

Description: This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, con...


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MTD6N15-1 General Description


This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

MTD6N15-1 Maximum Ratings

Rating

Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
150
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 50 s)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Pulsed
ID
IDM
6.0
20
Adc


Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD

20
0.16
Watts
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C(Note 1)
PD
1.25
0.01
Watts
W/°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C(Note 2)
PD
1.75
0.014
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
°C

MTD6N15-1 Features

• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape

MTD6N15-1 Connection Diagram

MTD6N15-1  Connection Diagram

MTD6N15-1 datasheet

MTD6N15-1
PDF/DataSheet Download

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