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MFG:MOT  Package Cooled:SOT223  

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Part Number: MTD6N15

 

MFG: MOT

Package Cooled: SOT223

 

Description: This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, con...


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MTD6N15 General Description


This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

MTD6N15 Maximum Ratings

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
150
Vdc
GatetoSource Voltage - Continuous
GatetoSource Voltage - Nonrepetitive (tp 50 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Pulsed
ID
IDM
6.0
20
Adc


Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
Watts
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
1.25
0.01
Watts
W/°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C
PD
1.75
0.014
Watts
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
°C

MTD6N15 Features

• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.3 Max
• Rugged - SOA is Power Dissipation Limited
• SourcetoDrain Diode Characterized for Use With
Inductive Loads
• Low Drive Requirement - VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape

MTD6N15 datasheet

MTD6N15
PDF/DataSheet Download

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