MTM50N05E

The MTM50N05E is a kind of TMOS field effect transistor. It is N-channel enhancement-mode. The device is intended for low voltage, high speed power switching applications in power supplies, converters and PWM motor controls. The MTM50N05E is particularly suitable for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. The "E" series is designed to withstand high energy in the avalanche and commutation modes and offers drain-to-source diodes with fast recovery times.

There are some features of MTM50N05E as follows: (1)internal source-to-drain diode designed to replace external zener transient suppressor-absorbs high energy in the avalanche mode-unclamped inductive switching (UIS) energy capability specified at 100; (2)commutating safe operating area (CSOA) specified for use in half and full bridge circuits; (3)source-to-drain diode recovery time comparable to a discrete fast recovery diode; (4)diode is characterized for use in bridge circuits; (5)DC equivalent to IRFZ40.

What comes next is about the maximum ratings of MTM50N05E : (1)drain-source voltage, VDSS: 50 V; (2)drain-gate voltage (RGS=1 M), VDGR: 50 V; (3)gate-source voltage, continuous, VGS: ±20 V; (4)gate-source voltage, non-repetitive (tp50s), VGSM: ±40 V; (5)drain current, continuous, ID (TC=25): 50 A; (6)drain current, pulsed, IDM: 160 A; (7)total power dissipation, PD @ TC=25: 125 W; (8)operating and storage temperature range, TJ, TSTG: -65 to 150. Then is about the thermal characteristics: (1)thermal resistance, junction to case, RJC: 1.0/W; (2)thermal resistance, junction to ambient, RJC: 30/W; (3)maximum lead temperature for soldering purpose, 1/8 " from case for 5 seconds, TL: 300.

The following is about the electrical characteristics of MTM50N05E (TC=25 unless otherwise noted): (1)drain-source breakdown voltage, V(BR)DSS: 50 V min at VGS=0, ID=0.25 mA; (2)zero gate voltage drain current, IDSS: 10A max at VDS=rated VDSS, VGS=0 and 80A max at VDS=0.8rated VDSS, VGS=0, TJ=125; (3)gate-body leakage current, forward, IGSSF: 100 nA max at VGSF=20 V, VDS=0; (4)gate-body leakage current, reverse, IGSSR: 100 nA max at VGSR=20 V, VDS=0 ; (5)gate threshold voltage, VGS(th): 2 V min and 4 V max at VDS=VGS, ID=250A, TJ=100; (6)static drain-source on-resistance, rDS(on): 0.028 Ohms max at VGS=10 V, ID=25 A; (7)drain-source on-voltage, VGS(on): 1.4 V max at ID=50 A and 1.3 A max at ID=25 A, TJ=100; (8)forward transconductance, gFS: 17 mhos typ at VDS=15 V, ID=25 A.