MTMF82310BBF

MOSFET N-CH 30V 18A S08

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SeekIC No. : 003430685 Detail

MTMF82310BBF: MOSFET N-CH 30V 18A S08

floor Price/Ceiling Price

US $ 1.51~1.51 / Piece | Get Latest Price
Part Number:
MTMF82310BBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • Unit Price
  • $1.51
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 18A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6000pF @ 10V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: SO8-F1 Supplier Device Package: SO8-F1-B    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Power - Max: 1W
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 18A
Input Capacitance (Ciss) @ Vds: 6000pF @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Package / Case: SO8-F1
Supplier Device Package: SO8-F1-B
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V


Parameters:

Technical/Catalog InformationMTMF82310BBF
VendorPanasonic - SSG (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs4.2 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 6000pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs-
Package / CaseSO8-F1
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MTMF82310BBF
MTMF82310BBF
MTMF82310BBFCT ND
MTMF82310BBFCTND
MTMF82310BBFCT



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