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MFG:ON  D/C:06+  

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Part Number: MTP20N15E

 

MFG: ON

 

D/C: 06+

Description: This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The ene...


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MTP20N15E General Description


This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTP20N15E Maximum Ratings

Rating

Symbol

Value

Unit

DrainSource Voltage

VDSS

150

Vdc

DrainGate Voltage (RGS = 1.0 MW)

VDGR

150

Vdc

GateSource Voltage
Continuous
NonRepetitive (tp  10 ms)

VGS
VGSM

± 20
± 32

Vdc

Drain Continuous
Continuous @ 100°C
Single Pulse (tp  10 ms)

ID
ID
IDM

20
12
60

Adc

Total Power Dissipation
Derate above 25°C

PD

112
0.9

Watts
W/°C

Operating and Storage Temperature Range

TJ, Tstg

55 to 150

°C

Single DraintoSource Avalanche Energy
Starting TJ = 25°C
(VDD = 120 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 0.3 mH)

EAS

60

mJ

Thermal Resistance
Junction to Case
Junction to Ambient

RqJC
RqJA

1.1
62.5

°C/W

Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds

TL

260

°C

MTP20N15E Features

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature

MTP20N15E datasheet

MTP20N15E
PDF/DataSheet Download

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